1Solar Energy Research Institute (SERI), Universiti Kebangsaan Malaysia (UKM), 43600 Bangi, Selangor, Malaysia
2Department of Mathematics, Physics and Electrical Engineering, Ellison Building, Northumbria University, Newcastle upon Tyne, NE1 8ST, United Kingdom
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@article{IJRED60813, author = {Muhazri Abd Mutalib and Norasikin Ahmad Ludin and Vincent Barrioz and Suhaila Sepeai and Mohd Sukor Su’ait and Muhammad Ubaidah Syafiq Mustaffa and Puvaneswaran Chelvanathan}, title = {Electrical and morphological variations with sintering temperature of electron transport layer in perovskite solar cell}, journal = {International Journal of Renewable Energy Development}, volume = {14}, number = {4}, year = {2025}, keywords = {perovskite solar cells; electron transport layer; TiO2; sintering temperature; charge transfer resistance}, abstract = {The typical PSCs essentially made up of electron transporting material (compact and mesoporous), perovskite absorber layer and hole transporting material. The compact TiO 2 primary function is allow the movement of photogenerated electron to the device circuit from the active layer and to block the photogenerated holes from recombination at TCO substrate. Mesoporous TiO 2 mainly functions to receive the photogenerated charge from the perovskite absorber and enable thicker formation of perovskite absorber due to the voids in the TiO 2 mesoscopic framework. Many studies have implemented 500 ℃ as the standard in sintering the TiO 2 layer. However, the effects of sintering temperature of ETL TiO 2 have never been systematically described in terms of morphology and photoelectrochemical properties. In this manuscript, we have studied the morphological and photoelectrochemical properties of ETM TiO 2 thin film prepared at different sintering temperature. Spin coated TiO 2 layers were examined using X-ray Diffraction for crystal structure and phase identification, FESEM for morphological analysis, UV-Vis Spectroscopy for optical absorbance and transmittance of light and PEC test for LSV, EIS and TPC analyses. Surface roughness was not a major influencing factor of photocurrent density rather than the anatase phase of the TiO 2 thin film is more important. It was revealed that at 500 ℃, the TiO 2 thin film possess the highest photocurrent density with good stability and lowest charge transfer and series resistance. Higher sintering temperature of 550 ℃, would introduce lattice defects in the TiO 2 thin film which will reduce photocurrent density and increase resistance. This work offers a systematic evaluation of the ETL in terms of morphological and photoelectrochemical properties, which can be applied when selecting suitable material for ETL in perovskite solar devices.}, pages = {794--801} doi = {10.61435/ijred.2025.60813}, url = {https://ijred.cbiore.id/index.php/ijred/article/view/60813} }
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